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2SB1123S-TD-E

Manufacturer:

On Semiconductor

Mfr.Part #:

2SB1123S-TD-E

Datasheet:
Description:

BJTs TO-243 Through Hole PNP 500 mW Collector Base Voltage (VCBO):60 V Collector Emitter Voltage (VCEO):50 V Emitter Base Voltage (VEBO):6 V

ParameterValue
Length4.5 mm
Width2.5 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height1.5 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
Contact PlatingTin
Frequency150 MHz
Number of Elements1
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation500 mW
Power Dissipation500 mW
Max Collector Current2 A
Collector Emitter Breakdown Voltage50 V
Transition Frequency150 MHz
Element ConfigurationSingle
Max Frequency150 MHz
Collector Emitter Voltage (VCEO)50 V
Max Breakdown Voltage50 V
Gain Bandwidth Product150 MHz
Collector Base Voltage (VCBO)60 V
Collector Emitter Saturation Voltage-300 mV
Emitter Base Voltage (VEBO)6 V
Schedule B8541210080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Transistor TypePNP

Stock: 967

Distributors
pcbx
Unit Price$0.51296
Ext.Price$0.51296
QtyUnit PriceExt.Price
1$0.51296$0.51296
10$0.31973$3.19730
25$0.27661$6.91525
50$0.23931$11.96550
100$0.20704$20.70400
300$0.18103$54.30900
500$0.15829$79.14500
1000$0.14258$142.58000